2, Argonne National Laboratory, Lemont, Illinois, United States
The neutral divacancy (VV0) in silicon carbide (SiC) exhibits robust spin coherence and a high-quality near-infrared spin-photon interface in a material compatible with mature fabrication techniques. Here, we make use of this scalable semiconductor host and design electronic devices to manipulate embedded isolated quantum systems. Specifically, we create and isolate single VV0 defects in a commercial p-i-n diode . This simple integration enables engineering of the defect’s charge environment and drastically reduces electric field noise. Surprisingly, the use of electrical gating results in mitigating spectral diffusion and achieving near-lifetime limited optical lines. Furthermore, by exploiting field confinement of the junction, we show that the optical transitions can be gate-tuned by nearly a terahertz. This geometry also provides a method for using electric fields combined with optical excitation to enable deterministic charge state control.
Applying gigahertz ac electric fields to SiC devices produces coherent interference in the form of Landau-Zener-Stückelberg fringes, arising from interactions between microwave and optical photons , even in the absence of a microwave resonator. We demonstrate lifetime-limited optical coherence and clock-like spin transitions that result in increased robustness against magnetic noise. Electrical driving of optical transitions offers advantages over spin-based coupling and points towards new types of hybrid quantum systems. These results reveal new opportunities for electrical manipulation of spin-based quantum systems in scalable SiC electronic devices.
This work was done in collaboration with S. L. Bayliss, A. L. Crook, P. J. Mintun, S. J. Whiteley, G. Wolfowicz, H. Abe, A. Gali, V. Ivady, T. Ohshima, G. Thiering, P. Udvarhelyi.
 C. P. Anderson*, A. Bourassa*, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Oshima, D. D. Awschalom, “Electrical and optical control of single spins integrated in scalable semiconductor devices,” arXiv: 1906.08328
 K. C. Miao, A. Bourassa, C. P. Anderson, S. J. Whiteley, A. L. Crook, S. L. Bayliss, G. Wolfowicz, G. Thiering, P. Udvarhelyi, V. Ivady, H. Abe, T. Ohshima, A. Gali, D. D. Awschalom, “Electrically driven optical interferometry with spins in silicon carbide,” arXiv: 1905.12780