Gangtae Jin1 2 Chang-Soo Lee1 2 Xing Liao3 Juho Kim1 2 Zhen Wang4 Odongo Francis Ngome Okello1 Bumsu Park4 Jaehyun Park1 2 Cheolhee Han1 2 Hoseok Heo3 Jonghwan Kim1 Sang Ho Oh4 Si-Young Choi1 Hongkun Park3 Moon-Ho Jo1 2

1, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, , Korea (the Republic of)
2, Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, , Korea (the Republic of)
3, Department of Chemistry and Chemical Biology and Department of Physics, Harvard University, Cambridge, Massachusetts, United States
4, Department of Energy Science, Sungkyunkwan University, Suwon, , Korea (the Republic of)

We report wafer-scale growth of atomically thin, three-dimensional (3D) van der Waals (vdW) semiconductor membranes. By controlling the growth kinetics in the near-equilibrium limit during metalorganic chemical vapor depositions of MoS2 and WS2 monolayer (ML) crystals, we have achieved conformal ML coverage on diverse 3D texture substrates, such as periodic arrays of nanoscale needles and trenches on quartz and SiO2/Si substrates. The ML semiconductor properties, such as channel resistivity and photoluminescence, are verified to be seamlessly uniform over the 3D textures, and are scalable to wafer-scale. Additionally, we demonstrated that these 3D films can be easily delaminated from the growth substrates to form suspended 3D semiconductor membranes. Our work suggests that vdW ML semiconductor films can be useful platforms for patchable membrane electronics with atomic precision, yet in large-areas, on arbitrary substrates.